Mechanism of formation of Ohmic contacts to ZnSe, ZnS, and mixed crystals ZnSXSe1−X
作者:
R. Gilbert Kaufman,
Peter Dowbor,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 10
页码: 4487-4490
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663075
出版商: AIP
数据来源: AIP
摘要:
The temperature range of Ohmic contact formation to ZnSe, ZnS0.5Se0.5, and ZnS is presented. New experiments show contacts are formed by cooldown rather than by heatup and that contacts can be formed and removed reversibly by cyclic cooling and heating. This and other evidence suggest contact formation by liquid‐phase epitaxy, as had been shown in group‐IV and ‐III‐V semiconductors, rather than diffusion. The role of wetting, which is necessary but not equivalent to contact formation, is discussed.
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