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Refractory metal silicides for self‐aligned gate modulation dopedn+‐(Al,Ga)As/GaAs field‐effect transistor integrated circuits

 

作者: N. C. Cirillo,   H. K. Chung,   P. J. Vold,   M. K. Hibbs‐Brenner,   A. M. Fraasch,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 6  

页码: 1680-1684

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.582961

 

出版商: American Vacuum Society

 

关键词: INTEGRATED CIRCUITS;FIELD EFFECT TRANSISTORS;ION IMPLANTATION;GATES;ELECTRICAL PROPERTIES;FABRICATION;ALUMINIUM SILICIDES;GALLIUM ARSENIDES;GALLIUM COMPOUNDS;LOW TEMPERATURE;MEDIUM TEMPERATURE;PERFORMANCE;GaAs;(Al,Ga)As;W5Si3;WSi2

 

数据来源: AIP

 

摘要:

A refractory metal silicide process has been developed for the fabrication of self‐aligned gate (Al,Ga)As/GaAs FET’s (MODFET’s). Completely planar, self‐aligned gate by ion implantation MODFET’s have been fabricated and have demonstrated typical transconductances of 180–200 mS/mm at room temperature and over 300 mS/mm at 77 K. Self‐aligned gate ring oscillator test circuits have demonstrated gate propagation delays as low as 17.6 ps/gate at 2.65 mW/gate at room temperature.

 

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