Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation
作者:
Kazuyoshi Torii,
Hirosi Kawakami,
Hiroshi Miki,
Keiko Kushida,
Yoshihisa Fujisaki,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 6
页码: 2755-2759
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.363980
出版商: AIP
数据来源: AIP
摘要:
Lead zirconate titanate (PZT) thin films were prepared by reactive coevaporation with high-concentration ozone. PZT thin films that demonstrate the highest charge storage density (280 fC/&mgr;m2at 1.5 V for 75-nm-thick film) yet reported have been fabricated. No fatigue was observed after 1011polarization switching cycles even though a Pt electrode is used. A low leakage current of <10−7A/cm2at 1.5 V was attained. These PZT films are promising candidates of an alternative capacitor dielectric for dynamic random access memory (DRAM) and ferroelectric nonvolatile memories. ©1997 American Institute of Physics.
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