Continuous and pulsed photoluminescence experiments in GaSb/AlSb multiple quantum wells have been performed before and after exposure to hydrogen. An appreciable increase in the emission efficiency has been observed for H ion doses as low as 1013/cm2. Since the results cannot be accounted for in terms of the plain passivation of nonradiative centers, the effect is ascribed mostly to a change in the mechanism of carrier relaxation within the lower end of the bound‐state distribution.