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Frequency-response measurements on silicon planar transistors

 

作者: G.R.Whitfield,  

 

期刊: Radio and Electronic Engineer  （IET Available online 1968）
卷期: Volume 36, issue 6  

页码: 335-340

 

年代: 1968

 

DOI:10.1049/ree.1968.0115

 

出版商: IERE

 

数据来源: IET

 

摘要:

This paper describes convenient laboratory methods of measuring the hybrid π parameters as a function of collector current. Typical results are given, and the variation of the transition frequency with collector current is discussed.

 

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