Two‐dimensional doping profiles from experimentally measured one‐dimensional secondary ion mass spectroscopy data
作者:
Scott Goodwin‐Johansson,
Xuefeng Liu,
Mark Ray,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 247-253
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587148
出版商: American Vacuum Society
关键词: DOPING PROFILES;SIMS;USES;TWO−DIMENSIONAL SYSTEMS;INTEGRATED CIRCUITS;SEMICONDUCTOR DEVICES
数据来源: AIP
摘要:
Two‐dimensional doping profiles can be determined from multiple one‐dimensional secondary ion mass spectroscopy (SIMS) profiles using computed tomography techniques. The chemical nature of SIMS enables the measurement of both as‐implanted and annealed profiles with this technique. Mechanical lapping was done of multiple samples to expose different faces of the substrates followed by one‐dimensional SIMS measurements. Measurements have been done with a Perkin Elmer Model 6300 SIMS and a Cameca IMS‐3f SIMS. Refinements have been made in the numerical alignment of the separate one‐dimensional SIMS data sets, which lead to more accurate reconstructions of the two‐dimensional profiles.
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