In situpatterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires
作者:
T. Takahashi,
Y. Arakawa,
M. Nishioka,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2372-2374
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104874
出版商: AIP
数据来源: AIP
摘要:
We demonstrated a novel selective growth technology for the fabrication of quantum microstructures utilizinginsitupatterning of contamination resist in the metalorganic chemical vapor deposition system. The results indicate that a GaAs quasi‐quantum wire structure, as narrow as 700 nm, can be successfully fabricated, showing that this technique may be applied to fabrication technologies for quantum microstructures.
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