Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux
作者:
J. Castagne,
E. Bedel,
C. Fontaine,
A. Munoz‐Yague,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 1
页码: 246-248
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341472
出版商: AIP
数据来源: AIP
摘要:
A technique for preparing Si substrates in molecular‐beam epitaxy (MBE) systems devoted to III–V compound growth is described. A C‐ and O‐free Si surface is obtained on previously oxidized substrates using a HF solution etch. A (2×1) reconstructed surface with steps of monoatomic height is achieved with an atomic Si flux provided by a standard effusion cell, while the substrate is maintained at 600 °C for ∼10 min. The experimental results presented were obtained using Auger electron spectrometry and reflection high‐energy electron diffraction.
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