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Growth of GaAs light modulators on Si by gas source molecular‐beam epitaxy for 850 nm optical interconnects

 

作者: J. E. Cunningham,   K. W. Goossen,   J. A. Walker,   W. Jan,   M. Santos,   D. A. B. Miller,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1246-1250

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587056

 

出版商: American Vacuum Society

 

关键词: OPTOELECTRONIC DEVICES;OPTICAL MODULATORS;GALLIUM ARSENIDES;SILICON;MOLECULAR BEAM EPITAXY;HYDROGEN ADDITIONS;PLASMA SOURCES;DESORPTION;RHEED;SURFACE RECONSTRUCTION;QUANTUM WELLS;GaAs;Si;Si:H;SiO2

 

数据来源: AIP

 

摘要:

The growth of GaAs quantum well modulators on Si for photonic switching applications is reported. Comparison of modulator’s quantum confined Stark effect atop different miscut Si surfaces demonstrate the need for a highly ordered array of bilayer steps as an initial Si surface condition for heteroepitaxy. Proton implantation into the SiO2/Si system via an electron cyclotron resonance plasma to lower the Si oxide desorption temperature, while perserving step ordering of the surface, is explored.  

 

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