The development of ferroelectric memory device requires improvements in electrical characteristics such as fatigue, retention, imprint and other properties. Fatigue properties of PZT thin films were improved by using Pt/IrO2or Ir/IrO2used as electrodes, we reported. This report presents a study of the retention and the imprint characteristics of PZT thin films on various electrodes. Pt/IrO2and Ir/IrO2layer structures were used as electrodes of the PZT capacitors. In the case of using an Ir/IrO2electrode, the improvements in electrical properties from the measurements of the retention and the imprint characteristics.