Excitation and deexcitation ofEr3+in crystalline silicon
作者:
P. G. Kik,
M. J. A. de Dood,
K. Kikoin,
A. Polman,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 13
页码: 1721-1723
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118680
出版商: AIP
数据来源: AIP
摘要:
Temperature dependent measurements of the 1.54 &mgr;m photoluminescence of Er implanted N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the intensity quenches by more than a factor thousand, while the lifetime quenches from 420 to 3 &mgr;s. The quenching processes are described by an impurity Auger energy transfer model that includes bound exciton dissociation and a nonradiative energy backtransfer process. Electron and hole trap levels are determined. Direct evidence for a backtransfer process follows from spectral response measurements on an Er-implanted Si solar cell. ©1997 American Institute of Physics.
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