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Industry Gambles on Electron Synchrotrons for X‐Ray Lithography

 

作者: Barbara Goss Levi,  

 

期刊: Physics Today  (AIP Available online 1991)
卷期: Volume 44, issue 10  

页码: 17-21

 

ISSN:0031-9228

 

年代: 1991

 

DOI:10.1063/1.2810272

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ultralarge‐scale integrated circuits are patterned by optical lithography, which can now imprint linewidths narrower than 0.8 micron in commercial production. With some promising innovations, optical lithography may be able to push its limiting linewidths below 0.25 microns, narrow enough to produce the next two generations of circuits—16‐Mbit and 64‐Mbit dynamic random‐access memory chips. To cram still more electronic features onto a given area, as is envisioned for the manufacture of chips with 256 Mbits or more, will probably require wavelengths typical of soft x rays rather than visible or ultraviolet light. Thus for nearly 20 years researchers have been developing the sources, masks, aligners, resists and other components of x‐ray lithographic systems.

 

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