Reproducible temperature measurement of GaAs substrates during molecular beam epitaxial growth

 

作者: S. L. Wright,   R. F. Marks,   W. I. Wang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1986）
卷期: Volume 4, issue 2  

页码: 505-506

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583410

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;HIGH TEMPERATURE;VERY HIGH TEMPERATURE;PYROMETERS;OPTICAL PYROMETERS;TEMPERATURE MEASUREMENT;USES;GaAs

 

数据来源: AIP

 

 

点击下载:  PDF (213KB)

返 回