Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si
作者:
T. J. Magee,
C. Leung,
H. Kawayoshi,
L. J. Palkuti,
B. K. Furman,
C. A. Evans,
L. A. Christel,
J. F. Gibbons,
D. S. Day,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 7
页码: 564-566
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92795
出版商: AIP
数据来源: AIP
摘要:
The redistribution of recoil oxygen implants produced by the implantation of As ions through oxide layers on Si substrates has been investigated at annealing temperatures in the range 4000–1000 °C. Using transmission electron microscopy and secondary ion mass spectrometry profiling, it has been shown that the implanted (recoil) oxygen is rapidly gettered into residual damage structure at anneal temperatures < 900 °C. At temperatures ⩾ 1000 °C residual damage gettering sites are annihilated, releasing oxygen to migrate toward the Si surface. At the higher‐annealing temperatures, oxygen has been shown to outdiffuse rapidly into the overlying (1000 A˚) oxide layer on the sample surface.
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