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Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser

 

作者: N. Yasuhira,   I. Suemune,   Y. Kan,   M. Yamanishi,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 15  

页码: 1391-1393

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102477

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new type of laser structure which utilizes the selectively doped double‐heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH‐LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.

 

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