High temperature surface degradation of III–V nitrides
作者:
C. B. Vartuli,
S. J. Pearton,
C. R. Abernathy,
J. D. MacKenzie,
E. S. Lambers,
J. C. Zolper,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3523-3531
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588792
出版商: American Vacuum Society
关键词: ALUMINIUM NITRIDES;GALLIUM NITRIDES;INDIUM NITRIDES;SURFACE PROPERTIES;STOICHIOMETRY;ELECTRIC CONDUCTIVITY;ANNEALING;ROUGHNESS;TEMPERATURE DEPENDENCE;TEMPERATURE RANGE 0400−1000 K;TEMPERATURE RANGE 1000−4000 K;(In,Ga)N;(In,Al)N;AlN;GaN;InN
数据来源: AIP
摘要:
The surface stoichiometry, surface morphology, and electrical conductivity of AlN, GaN, InN, InGaN, and InAlN were examined at rapid thermal annealing temperatures up to 1150 °C. The sheet resistance of the AlN dropped steadily with annealing, but the surface showed signs of roughening only above 1000 °C. Auger electron spectroscopy (AES) analysis showed little change in the surface stoichiometry even at 1150 °C. GaN root mean square (rms) surface roughness showed an overall improvement with annealing, but the surface became pitted at 1000 °C, at which point the sheet resistance also dropped by several orders of magnitude, and AES confirmed a loss of N from the surface. The InN surface had roughened considerably even at 650 °C, and scanning electron microscopy showed significant degradation. In contrast to the binary nitrides, the sheet resistance of InAlN was found to increase by ∼102from the as grown value (3.2×10−3Ω cm) after annealing at 800 °C and then remain constant up to 1000 °C, while that of InGaN increased by two orders of magnitude between 700 and 900 °C. The rms roughness increased above 800 and 700 °C, respectively, for InAlN and InGaN samples. In droplets began to form on the surface at 900 °C for InAlN and at 800 °C for InGaN, and then evaporate at 1000 °C, leaving pits. AES analysis showed a decrease in the N concentration in the top 500 Å of the sample for annealing ≥800 °C in both materials.
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