Dry etching of GaAs and InP for optoelectronic devices
作者:
A.J.Carter,
B.Thomas,
D.V.Morgan,
J.K.Bhardwaj,
A.M.McQuarrie,
M.A.Stephens,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1989)
卷期:
Volume 136,
issue 1
页码: 2-5
年代: 1989
DOI:10.1049/ip-j.1989.0002
出版商: IEE
数据来源: IET
摘要:
The plasma etching of GaAs and InP using CH4/H2process gas is reported, and their etching characteristics as a function of platen temperature are shown. These results highlight the two different etching mechanisms for GaAs and InP. Etching of GaAs using chlorine plasma chemistry is discussed with emphasis on surface roughness and damage and then compared to the CH4/H2process chemistry which yields better etch surface characteristics.
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