Strain and critical thickness in GaSb(001)/AlSb
作者:
H.‐J. Gossmann,
G. P. Schwartz,
B. A. Davidson,
G. J. Gualtieri,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1989)
卷期:
Volume 7,
issue 4
页码: 764-766
ISSN:0734-211X
年代: 1989
DOI:10.1116/1.584641
出版商: American Vacuum Society
关键词: ALUMINIUM ANTIMONIDES;GALLIUM ANTIMONIDES;FILMS;INTERFACES;MORPHOLOGY;INTERFACE STRUCTURE;STRAINS;THICKNESS;STRESS RELAXATION;ION SCATTERING ANALYSIS;GaSb;AlSb
数据来源: AIP
摘要:
Measurements of critical layer thicknesses and strain relaxation have been made for AlSb on GaSb(001) using ion scattering/particle induced x‐ray techniques. The maximum strain in the films agrees well with that calculated from bulk elasticity data. The critical thickness as measured by the ion channeling experiment is ≊140±30 Å. Films exceeding the critical thickness do not relieve the strain immediately but rather show a gradual relaxation up to ≊1000 Å. The results are compared with theoretical models of strain relief and critical thickness. Issues related to the protection of the AlSb films from oxidation, beam damage, and the use of particle‐induced x‐ray emission have been addressed. A protective cap of ≊200 Å of Be was found to give the best performance.
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