AbstractThe Czochralski technique without encapsulant in a flowing atmosphere of hydrogen was used for the growth of GaSb single crystals doped with either sulphur or nitrogen. It has been shown that this method is not suitable for the prepartion of GaSb doped with volatile elements because they evaporate during the growth procedure and impair the single crystalline growth. The highest concentration of sulphur in the single crystals has been found to be<1.2 × 1017atoms · cm−3. At higher concentrations, GaSb became either polycrystalline or twinned. The growth of N‐doped single crystals was similar to that of S‐dop