Sol‐gel silicate thin‐film electronic properties
作者:
W. L. Warren,
P. M. Lenahan,
C. J. Brinker,
C. S. Ashley,
S. T. Reed,
G. R. Shaffer,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 8
页码: 4404-4408
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348366
出版商: AIP
数据来源: AIP
摘要:
We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol‐gel‐derived silicate thin films and have identified several factors that strongly affect the thin‐film electronic properties. We find that sol‐gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.
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