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Comment on ‘‘Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2interface’’ [J. Appl. Phys.73, 4388 (1993)]

 

作者: S. Alexandrova,  

 

期刊: Journal of Applied Physics  （AIP Available online 1995）
卷期: Volume 77, issue 5  

页码: 2223-2223

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.358808

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is pointed out in this comment that reliable models of Si/SiO2interface can be revealed from the energy distribution of the interface states only after careful estimation of inaccuracies in ideal interface modeling. ©1995 American Institute of Physics.

 

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