A method for reducing the interface‐state density in polysilicon gate metal‐nitride‐oxide‐semiconductor (MNOS) capacitors is reported. The method involves deposition of a sacrificial blanket aluminum layer on top of a chemical‐vapor‐deposition (CVD) oxide over MNOS capacitors. The entire stack was then annealed at 450 °C in nitrogen and then the metal and CVD oxide were stripped away. The interface state density was reduced from 1011to 1010cm−2eV−1after this anneal. It is believed that Al reacts with trace water in the CVD oxide and generates active hydrogen. The hydrogen diffuses to the Si/SiO2interface and passivates the interface states.