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Photoluminescence study of high quality InGaN–GaN single heterojunctions

 

作者: C. J. Sun,   J. W. Yang,   Q. Chen,   B. W. Lim,   M. Zubair Anwar,   M. Asif Khan,   H. Temkin,   D. Weismann,   I. Brenner,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 5  

页码: 668-670

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117800

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In this letter we report the results of room‐temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge. ©1996 American Institute of Physics.

 

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