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Angle of incidence effects of an oxygen ion beam on the surface chemistry of GaAs

 

作者: J. S. Solomon,   J. T. Grant,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 1  

页码: 199-204

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587181

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;ION COLLISIONS;CHEMICAL RADIATION EFFECTS;OXYGEN IONS;INCIDENCE ANGLE;SURFACE PROPERTIES;MASS SPECTROSCOPY;SILICON ADDITIONS;BERYLLIUM ADDITIONS;OXIDATION;SECONDARY EMISSION;AUGER ELECTRON SPECTROSCOPY;KEV RANGE 10−100;SPUTTERING;GaAs:O

 

数据来源: AIP

 

摘要:

This article describes the influence of the angle of incidence of the interaction of oxygen ions with GaAs surfaces and the effects these interactions have on compositional quantification by secondary ion mass spectrometry. Both Auger electron and small spot size x‐ray photoelectron spectroscopies were used to study the chemistry of the bombarded surfaces. The oxidation states of gallium and arsenic and the overall gallium‐to‐arsenic ratios were found to vary in a systematic way with angle of incidence. Changes in gallium and arsenic surface chemistry are correlated with secondary ion yields of dopants or impurity atoms.

 

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