Enhancement of emission intensity in indirect‐gap AlxGa1−xAs (x=0.53) by nitrogen‐ion implantation
作者:
Yunosuke Makita,
Shun‐ichi Gonda,
Hachiro Ijuin,
Toshio Tsurushima,
Hisao Tanoue,
Shigeru Maekawa,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 28,
issue 2
页码: 103-105
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.88657
出版商: AIP
数据来源: AIP
摘要:
Nitrogen ions were implanted into indirect‐gap AlxGa1−xAs (x=0.53) and photoluminescence measurements were made at 2 °K as a function of annealing temperature. After sufficient annealing three emission bands were observed presumably due to the substitution of the nitrogen atoms with the host As atoms and the integrated intensity of the luminescence of the wafer increased by about 200 times compared with that of the unimplanted and annealed wafer. This can probably be ascribed to the formation of isoelectronic traps in the AlxGa1−xAs : N system.
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