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Improved characterization of impurities in semiconductors from thermal carrier measurements

 

作者: J. S. Blakemore,  

 

期刊: Journal of Applied Physics  (AIP Available online 1980)
卷期: Volume 51, issue 2  

页码: 1054-1059

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327711

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Conditions are discussed for which the concentration, binding energy, and compensation of a set of impurities can be deduced from the temperature dependence of the thermal free‐carrier population. Improved methods for verifying the quality of a numerical fit to the mass‐action equations are illustrated with data for germanium doped with indium or mercury acceptors. The graphical methods illustrated permit a critical assessment of whether the data really conforms to the generally used equations, and how various forms of error or inapplicability can be observed. It is pointed out that these same techniques can be useful in analysis of thermal emission data under nonequilibrium conditions.

 

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