Low cost ion implantation into silicon and pulsed annealing. application to the manufacturing of solar cells
作者:
J.C. Muller,
P. Siffert,
期刊:
Radiation Effects
(Taylor Available online 1982)
卷期:
Volume 63,
issue 1-4
页码: 81-103
ISSN:0033-7579
年代: 1982
DOI:10.1080/00337578208222829
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A simple procedure has been developed for high current ion implantation. In particular, no mass separation is used in the beam. The procedure is described in some detail, as well as the various characteristics of the implanted layers: ion distribution, damage (macroscopic and microscopic), effects of conventional and pulsed annealing. This technique has been employed for preparing solar cells on silicon. The properties of these devices will be reviewed and compared to conventionally prepared cells.
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