Polarization switching in a tensile-strained InGaAs/InGaAsP multiple quantum well distributed feedback laser diode
作者:
Natsuhiko Mizutani,
Sei-ichi Miyazawa,
Masahiro Nakanishi,
Masao Majima,
Jun Nitta,
Yoshinobu Sekiguchi,
Hidetoshi Nojiri,
Yuichi Handa,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 24
页码: 3124-3126
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121567
出版商: AIP
数据来源: AIP
摘要:
An inhomogeneously biased distributed feedback (DFB) laser diode (LD) with two electrodes switched its polarization mode by 3 mA change of the bias current, maintaining single longitudinal mode oscillation. In the active layer of the LD, 13 nm thick and 0.6&percent; tensile-strained InGaAs multiple quantum well (MQW) equalized the transverse electric and the transverse magnetic modal optical gain at 1.55 &mgr;m. With various grating pitches on the same MQW active layer, polarization switching DFB LDs were realized in the wavelength range as wide as 18 nm. The linewidth characteristics during the polarization switching were confirmed to be narrow due to the small switching current. ©1998 American Institute of Physics.
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