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Measurements of hot‐electron conduction and real‐space transfer in GaAs‐AlxGa1−xAs heterojunction layers

 

作者: M. Keever,   H. Shichijo,   K. Hess,   S. Banerjee,   L. Witkowski,   H. Morkoc¸,   B. G. Streetman,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 1  

页码: 36-38

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92117

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Measurements of the current‐voltage characteristics of GaAs‐AlxGa1−xAs heterojunction layers are reported. The experimental results are consistent with the idea of real‐space transfer of the electrons out of the GaAs into the AlxGa1−xAs under hot‐electron conditions. Current saturation and negative differential resistance are observed as predicted by Monte Carlo simulations.

 

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