InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
作者:
Piotr Perlin,
Christian Kisielowski,
Valentin Iota,
B. A. Weinstein,
Laila Mattos,
Noad A. Shapiro,
Joachim Kruger,
Eicke R. Weber,
Jinwei Yang,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 19
页码: 2778-2780
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122588
出版商: AIP
数据来源: AIP
摘要:
The energies of photo- and electroluminescence transitions inInxGa1−xNquantum wells exhibit a characteristic “blueshift” with increasing pumping power. This effect has been attributed either to band-tail filling, or to screening of piezoelectric fields. We have studied the pressure and temperature behavior of radiative recombination inInxGa1−xN/GaNquantum wells withx=0.06,0.10, and 0.15. We find that, although the recombination has primarily a band-to-band character, the excitation-power induced blueshift can be attributed uniquely to piezoelectric screening. Calculations of the piezoelectric field in pseudomorphicInxGa1−xNlayers agree very well with the observed Stokes redshift of the photoluminescence. The observed pressure coefficients of the photoluminescence (25–37 meV/GPa) are surprisingly low, and, so far, their magnitude can only be partially explained. ©1998 American Institute of Physics.
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