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Submicron pattern fabrication by focused ion beams

 

作者: T. Kato,   H. Morimoto,   K. Saitoh,   H. Nakata,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1985）
卷期: Volume 3, issue 1  

页码: 50-53

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583289

 

出版商: American Vacuum Society

 

关键词: ION BEAMS;FOCUSING;FABRICATION;LITHOGRAPHY;VLSI;ION IMPLANTATION;KEV RANGE 100−1000

 

数据来源: AIP

 

摘要:

A focused ion beam (FIB) technology has many advantages for submicron structure fabrication and other maskless processes. In order to develop 4–16 M(D) RAM, the FIB technology is strongly desired for its capability of submicron lithography without proximity effects.

 

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