Optical memory effect in GaN epitaxial films
作者:
V. A. Joshkin,
J. C. Roberts,
F. G. McIntosh,
S. M. Bedair,
E. L. Piner,
M. K. Behbehani,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 2
页码: 234-236
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120414
出版商: AIP
数据来源: AIP
摘要:
We report on memory effects in the optical properties of GaN and AlN epitaxial-films grown by atmospheric pressure metal organic chemical vapor deposition. After exposing selected areas of particular samples with He–Cd laser light (3.8 eV), we observed a persistent and marked decrease in the near band edge photoluminescence (PL) intensity emitted from these areas. This effect has been observed in epitaxial films that typically have a pyramidlike hillock surface. This ability to modulate PL emission intensity at individual points in these materials can be exploited as a method for optical data storage. A means of erasing information stored using this effect has also been investigated using lower energy (∼2 eV). ©1997 American Institute of Physics.
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