Diethylsilane was used to prepare SiO2films on Si wafers by a low pressure chemical vapor deposition technique at low temperatures (≤400 °C). The deposited films have good conformality (83%), a low residual carbon concentration (<1 at. %) and a low residual stress (<109dyn/cm2); which compare favorably with films prepared by other processes. We also correlated the growth rates with the processing parameters to show that the deposition process follows the heterogeneous bimolecular reaction kinetics. Infrared spectroscopy was used to detect the presence of HSi–O3bending band (880 cm−1) in SiO2films prepared under certain processing conditions. Based on the reaction kinetic model, we optimize the processing conditions to reduce the SiH incorporation and mobile charge carrier concentration in SiO2films.