We report the successful growth of ZnTe on nearly lattice‐matched III‐V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy.Insitureflection high‐energy electron diffraction measurements showed the characteristic streak patterns indicative of two‐dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high‐purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ≊1–2 A˚) indicative of uniform high quality growth. Secondary‐ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III‐V buffer layers.