Influence of oxygen incorporation on beryllium‐doped InGaAs grown by molecular beam epitaxy
作者:
A. Le Corre,
J. Caulet,
M. Gauneau,
S. Loualiche,
H. L’Haridon,
D. Lecrosnier,
A. Roizes,
J. P. David,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 20
页码: 1597-1599
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98566
出版商: AIP
数据来源: AIP
摘要:
InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016to 5×1019cm−3as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed thatp‐type layers presented a high degree of compensation, and for a doping level below 5×10−7cm−3, they are often found to bentype. SIMS analysis shows that oxygen is responsible for such behavior. Beryllium doping leads to incorporation of a large amount of oxygen in the epitaxial layers. Investigations on the origin of oxygen incorporation show that it is extremely sensitive to the residual vacuum during the growth and can be reduced by decreasing arsenic pressure.
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