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Computer simulations of surfaces, interfaces, and physisorbed films

 

作者: Farid F. Abraham,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 534-549

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582836

 

出版商: American Vacuum Society

 

关键词: SIMS;SEGREGATION;BORON;ATOM TRANSPORT;SI JUNCTIONS;ION IMPLANTATION;SILICA;SILICON;BORON 11;SILICON 30;BORON IONS;OXYGEN IONS;SILICON IONS;CRYSTAL DOPING;OXIDATION;ORIENTATION;INTERFACES;INTERFACE PHENOMENA;MOS JUNCTIONS;DOPED MATERIALS;QUANTITY RATIO

 

数据来源: AIP

 

摘要:

We survey selected computer simulations or ‘‘experiments’’ relating to the statistical physics of surface phenomena. An introduction to the Monte Carlo and molecular dynamics simulation techniques is presented, followed by chosen computer simulation applications which have been done mainly at the IBM Research Laboratory over the last several years. The examples are taken from studies of the structure and thermodynamics of microclusters, liquid–vapor and liquid–solid interfaces and quasi‐two‐dimensional physisorbed films. An up‐to‐date bibliography of the various topics is given at the conclusion.

 

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