The concept and initial studies of a crosstie random access memory (CRAM)
作者:
L. J. Schwee,
P. E. Hunter,
K. A. Restorff,
M. T. Shephard,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 3
页码: 2762-2764
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.330958
出版商: AIP
数据来源: AIP
摘要:
The crosstie‐Bloch line memory elements which were used in the serial crosstie memory can be reconfigured into a random access memory. The new approach decreases the access time, eliminates complexity, increases reliability, and is straightforward. The five‐level nonvolatile device is intended to be integrated on a silicon chip with decoders and drivers on the chip. It is expected that some of the five levels will be folded in with the levels used to connect the transistors needed for decoding and driving.
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