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Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

 

作者: Shuji Nakamura,   Masayuki Senoh,   Shin-ichi Nagahama,   Naruhito Iwasa,   Takao Yamada,   Toshio Matsushita,   Hiroyuki Kiyoku,   Yasunobu Sugimoto,   Tokuya Kozaki,   Hitoshi Umemoto,   Masahiko Sano,   Kazuyuki Chocho,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 16  

页码: 2014-2016

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121250

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of7 kA/cm2.In contrast, the LDs grown on a sapphire substrate exhibited a high thermal resistance of 60 °C/W and a short lifetime of 200 h under room-temperature continuous-wave operation. ©1998 American Institute of Physics.

 

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