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Optical Absorption Edge in GaAs and Its Dependence on Electric Field

 

作者: T. S. Moss,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 10  

页码: 2136-2139

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1777031

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Values of absorption constant covering the range 1 cm−1to 104cm−1have been derived from transmission measurements made on single‐crystal gallium arsenide. The absorption edge is very steep up to ∼4000 cm−1, where there is a knee beyond which the absorption increases relatively slowly with photon energy. The energy bands have been calculated using Kane's theory. From these a theoretical absorption curve has been obtained which shows very good agreement with the experimental data.Using semi‐insulating material, it has been possible to measure the shift of the edge with applied electric field. The effect is small (∼200‐&mgr; ev shift for 5000‐v/cm field) but is in good agreement with theory.

 

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