The fundamental properties of In0.2Ga0.8As/GaAs strained‐layer quantum‐wells (QWs) grown on (311)A GaAs substrates were studied. The radiative and nonradiative recombination rates as a function of temperature were obtained from the photoluminescence (PL) spectra and the time‐resolved PL measurements. The radiative recombination rate is enhanced in (311)‐oriented QW structures as compared to (100)‐oriented ones. We fabricated graded‐index separate‐confinement heterostructure double quantum‐well lasers on (311)A GaAs substrates. We demonstrate the low threshold current density of 360 A/cm2for a 1.17 mm long laser at room temperature. ©1995 American Institute of Physics.