首页   按字顺浏览 期刊浏览 卷期浏览 PHOTOEMISSION FROM GaAs THIN FILMS
PHOTOEMISSION FROM GaAs THIN FILMS

 

作者: R. F. Steinberg,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 12, issue 3  

页码: 63-65

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1651900

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A technique is described for obtaining atomically clean GaAs surfaces by evaporating epitaxially a GaAs layer on the bulk crystal under ultrahigh vacuum. Photoemission sensitivities of 220 &mgr;A/lumen have been obtained, with high quantum yields in the near‐infrared region.

 

点击下载:  PDF (190KB)



返 回