作者: S. Fafard,
期刊: Journal of Applied Physics (AIP Available online 1997) 卷期: Volume 82, issue 8
页码: 3857-3860
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365751
出版商: AIP
数据来源: AIP
摘要:
Quantum well potentials are engineered to control the energy level shifts induced by semiconductor alloy intermixing. A few monolayers of a semiconductor with a different band gap can be inserted at the node or at the crest of wavefunctions with different parities to enhance the interdiffusion-induced interband transition energy-shifts, or to manipulate the intersubband transition energies. ©1997 American Institute of Physics.
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