An experiment has been performed in which wafers with boron‐doped, buried marker layers were implanted with 100 keV, 2×1015cm−2Si. This is an amorphizing implant. A second implant of B was introduced prior to any post‐implant annealing such that the implanted B was completely contained within the preamorphized region. After the implants, samples were annealed at various temperatures for various times and secondary‐ion mass spectroscopy was used to obtain the dopant profiles. It was found that the buried marker layer exhibited normal transient‐enhanced diffusion behavior. However, the B in the preamorphized region did not experience any significant amount of motion. This suggests that the solid phase regrowth of the amorphous layer did not cause a redistribution of the dopant atoms within that layer, and also the plane of dislocation loops that form at the amorphous/crystalline interface is an effective barrier against the interstitial damage diffusing upwards from the nonamorphized tail of the amorphizing Si implant. The same behavior was observed when As or P implants are used instead of the B implant. This type of behavior has been simulated using a model considering the growth of stacking faults bounded by dislocation loops. ©1996 American Institute of Physics.