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Interface properties of Al–SiO2–In0.53Ga0.47As MIS devices

 

作者: C. C. Shen,   K. P. Pande,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 314-315

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582815

 

出版商: American Vacuum Society

 

关键词: HYSTERESIS;INTERFACE STATES;INTERFACE PHENOMENA;MIS JUNCTIONS;CAPACITORS;ALUMINIUM;SILICA;INDIUM ARSENIDES;GALLIUM ARSENIDES;FILMS;ENERGY−LEVEL DENSITY

 

数据来源: AIP

 

摘要:

n‐In0.53Ga0.47As MIS capacitors with SiO2dielectric films have been investigated. The SiO2films, which were deposited by a novel low temperature process, exhibit stoichiometric composition. The MIS devices show a sharp interface and a minimum interface state density of 7×1011cm−2eV−1. The devices also show small hysteresis effects.

 

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