Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGexlayers
作者:
P. Kuo,
J. L. Hoyt,
J. F. Gibbons,
J. E. Turner,
D. Lefforge,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 5
页码: 706-708
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115281
出版商: AIP
数据来源: AIP
摘要:
Silicon thermal oxidation was used to characterize the interaction of Si interstitials with a Si1−xGexlayer and with B in Si1−xGex. Diffusion of B in a Si marker layer, positioned under a Si1−xGexlayer, was monitored as excess Si interstitials were injected into the bulk by the oxidation of the Si capping layer (T=850 °C,t=18 min). The Si1−xGexlayer did not affect the oxidation‐enhanced diffusion of B in the Si marker layer. Hence, Si1−xGex(x<0.30) does not appear to be a strong sink for Si interstitials. In addition, the enhancement from Si thermal oxidation (T=800 °C,t=60 min) of the measured B diffusivity in Si1−xGexis similar to that in Si. This indicates that, as in Si, the mechanism for B diffusion in Si1−xGex(x<0.18) primarily involves Si interstitials. ©1995 American Institute of Physics.
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