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Formation of silicon tips with <1 nm radius

 

作者: R. B. Marcus,   T. S. Ravi,   T. Gmitter,   K. Chin,   D. Liu,   W. J. Orvis,   D. R. Ciarlo,   C. E. Hunt,   J. Trujillo,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 3  

页码: 236-238

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102841

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5‐&mgr;m‐high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

 

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