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Temperature dependence of electron drift velocity in silicon

 

作者: G. A. Haas,   T. Pankey,   F. H. Harris,  

 

期刊: Journal of Applied Physics  （AIP Available online 1973）
卷期: Volume 44, issue 5  

页码: 2433-2434

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662587

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Time‐of‐flight electron drift velocity measurements have been made for Si between 300 and 415 °K in the range of electric fields near the velocity saturation knee. The results show a more pronounced decrease from saturation values at the higher temperatures.

 

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