This paper presents the values of thermal expansion anisotropy for various types of beryllium, including hot pressed, hot isopressed, cold isopressed, and extruded beryllium. The results were obtained by means of foil resistance strain gages. The data was collected in the temperature range of 75F to 200F. Included in the paper is a method devised to characterize the thermal expansion of a piece of single crystal silicon. This piece of silicon has been used to verify the manufacturer's values of thermal expansion compensation for the strain gages.