Bumpless monotonic bicubic interpolation for MOSFET device modelling
作者:
T.Shima,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 3
页码: 147-150
年代: 1985
DOI:10.1049/ip-i-1.1985.0030
出版商: IEE
数据来源: IET
摘要:
A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron and/or submicron VLSI MOSFET device modelling.
点击下载:
PDF
(459KB)
返 回