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Excimer laser lithography using contrast enhancing material

 

作者: M. Endo,   M. Sasago,   H. Nakagawa,   Y. Hirai,   K. Ogawa,   T. Ishihara,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 2  

页码: 559-563

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584399

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;VLSI;PHOTOCHEMISTRY;RESOLUTION;KRYPTON FLUORIDE LASERS;PHOTORESISTS;FABRICATION;ORGANIC POLYMERS;OPTICAL PROPERTIES;OPTICAL MODULATION;ULTRAVIOLET RADIATION;LASER RADIATION;PHOTOSENSITIVITY;USES;BLEACHING;FOCUSING;photoresist

 

数据来源: AIP

 

摘要:

A new process of excimer laser lithography is presented in this paper. A water soluble, contrast enhancing material, we have developed for the KrF (248 nm) excimer laser has made this new process possible. This material, named WSP‐EX (water soluble photopolymer for excimer laser), is characterized by the use of 5‐diazo‐Meldrum’s acid and has good contrast enhancing capability in both photobleaching and photoreactive speed at 248 nm. By utilizing this new material, we can obtain large focus‐depth lattitude. In this paper, the problem of matching the contrast enhancing material with the resist is also discussed.

 

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